SYSTEMS AND METHODS FOR PERFORMING IN-SITU DEPOSITION OF SIDEWALL IMAGE TRANSFER SPACERS

摘要

A method of performing a sidewall image transfer (SIT) process includes arranging a substrate within a substrate processing chamber, wherein the substrate includes a mandrel layer formed on the substrate and etching the mandrel layer to form a plurality of mandrels. The method further includes, without removing the substrate from within the substrate processing chamber and subsequent to etching the mandrel layer, depositing a thin spacer layer such that the thin spacer layer is formed on upper surfaces of the plurality of mandrels, sidewalls of the plurality of mandrels, and portions of the substrate between the sidewalls of the plurality of mandrels, subsequent to depositing the thin spacer layer, etching the thin spacer layer to remove the thin spacer layer from the upper surfaces of the mandrels and the portions of the substrate between the sidewalls of the plurality of mandrels such that only the thin spacer layer formed on the sidewalls of the plurality of mandrels remains, and, subsequent to etching the thin spacer layer from the upper surfaces of the mandrels and the portions of the substrate between the sidewalls of the plurality of mandrels, etching the plurality of mandrels to remove the plurality of mandrels from the substrate such that only the thin spacer layer formed on the sidewalls of the plurality of mandrels remains on the substrate.

主权项

1. A method of performing a sidewall image transfer (SIT) process, the method comprising:
arranging a substrate within a substrate processing chamber, wherein the substrate includes a mandrel layer formed on the substrate; etching the mandrel layer to form a plurality of mandrels; and without removing the substrate from within the substrate processing chamber and subsequent to etching the mandrel layer:
depositing a thin spacer layer such that the thin spacer layer is formed on upper surfaces of the plurality of mandrels, sidewalls of the plurality of mandrels, and portions of the substrate between the sidewalls of the plurality of mandrels;subsequent to depositing the thin spacer layer, etching the thin spacer layer to remove the thin spacer layer from the upper surfaces of the mandrels and the portions of the substrate between the sidewalls of the plurality of mandrels such that only the thin spacer layer formed on the sidewalls of the plurality of mandrels remains; andsubsequent to etching the thin spacer layer from the upper surfaces of the mandrels and the portions of the substrate between the sidewalls of the plurality of mandrels, etching the plurality of mandrels to remove the plurality of mandrels from the substrate such that only the thin spacer layer formed on the sidewalls of the plurality of mandrels remains on the substrate.