| 发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
A method for manufacturing a semiconductor device includes: forming a first major electrode on a first major surface of a semiconductor substrate; forming a second major electrode on a second major surface of the semiconductor substrate opposite to the first major surface; carrying out a surface activating treatment to activate surfaces of the first and second major electrodes; carrying out a surface cleaning treatment to clean up the surfaces of the first and second major electrodes; and after the surface activating treatment and the surface cleaning treatment, simultaneously forming first and second Ni films on the first and second major electrodes respectively by a wet film forming method, wherein a ratio of crystalline Ni contained in the first and second Ni films is 2% or more. |
| 申请公布号 |
US2017076948(A1) |
申请公布日期 |
2017.03.16 |
| 申请号 |
US201615132283 |
申请日期 |
2016.04.19 |
| 申请人 |
Mitsubishi Electric Corporation |
发明人 |
NAKATA Kazunari;TERASAKI Yoshiaki;SUNAMOTO Masatoshi |
| 分类号 |
H01L21/288;H01L21/768;H01L21/3213;H01L29/66 |
主分类号 |
H01L21/288 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for manufacturing a semiconductor device comprising:
forming a first major electrode on a first major surface of a semiconductor substrate; forming a second major electrode on a second major surface of the semiconductor substrate opposite to the first major surface; carrying out a surface activating treatment to activate surfaces of the first and second major electrodes; carrying out a surface cleaning treatment to clean up the surfaces of the first and second major electrodes; and after the surface activating treatment and the surface cleaning treatment, simultaneously forming first and second Ni films on the first and second major electrodes respectively by a wet film forming method, wherein a ratio of crystalline Ni contained in the first and second Ni films is 2% or more. |
| 地址 |
Tokyo JP |
