发明名称 |
CURRENT REFERENCE CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT INCLUDING THE SAME |
摘要 |
A current reference circuit and a semiconductor IC including the current reference circuit, the current reference circuit including a proportional to absolute temperature (PTAT) current generator configured to generate, in an output branch, a first current proportional to a temperature; and a current subtractor configured to generate a reference current by subtracting a second current generated based on a current flowing in an internal branch of the PTAT current generator, from the first current flowing in the output branch. The second current is set to have a same temperature-based change characteristic as the first current and a level different from a level of the first current. |
申请公布号 |
US2017075377(A1) |
申请公布日期 |
2017.03.16 |
申请号 |
US201615236502 |
申请日期 |
2016.08.15 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SHIN HO-YOUNG |
分类号 |
G05F3/26 |
主分类号 |
G05F3/26 |
代理机构 |
|
代理人 |
|
主权项 |
1. A current reference circuit comprising:
a proportional to absolute temperature (PTAT) current generator configured to generate, in an output branch, a first current proportional to a temperature; and a current subtractor configured to generate a reference current by subtracting a second current generated based on a current flowing in an internal branch of the PTAT current generator, from the first current flowing in the output branch, wherein the second current is set to have a same temperature-based change characteristic as the first current and a level different from a level of the first current. |
地址 |
SUWON-SI KR |