发明名称 CURRENT REFERENCE CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT INCLUDING THE SAME
摘要 A current reference circuit and a semiconductor IC including the current reference circuit, the current reference circuit including a proportional to absolute temperature (PTAT) current generator configured to generate, in an output branch, a first current proportional to a temperature; and a current subtractor configured to generate a reference current by subtracting a second current generated based on a current flowing in an internal branch of the PTAT current generator, from the first current flowing in the output branch. The second current is set to have a same temperature-based change characteristic as the first current and a level different from a level of the first current.
申请公布号 US2017075377(A1) 申请公布日期 2017.03.16
申请号 US201615236502 申请日期 2016.08.15
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SHIN HO-YOUNG
分类号 G05F3/26 主分类号 G05F3/26
代理机构 代理人
主权项 1. A current reference circuit comprising: a proportional to absolute temperature (PTAT) current generator configured to generate, in an output branch, a first current proportional to a temperature; and a current subtractor configured to generate a reference current by subtracting a second current generated based on a current flowing in an internal branch of the PTAT current generator, from the first current flowing in the output branch, wherein the second current is set to have a same temperature-based change characteristic as the first current and a level different from a level of the first current.
地址 SUWON-SI KR