发明名称 |
RESIST PATTERN-FORMING METHOD |
摘要 |
A resist pattern-forming method comprises applying a chemically amplified resist material on a substrate to form a resist film on the substrate. The resist film is patternwise exposed to a radioactive ray having a wavelength of no greater than 250 nm. The resist film patternwise exposed is floodwise exposed to a radioactive ray having a wavelength of greater than 250 nm. The resist film floodwise exposed is baked and developed with a developer solution comprising an organic solvent. The chemically amplified resist material comprises a component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The component comprises: a radiation-sensitive sensitizer generating agent, and at least one of a radiation-sensitive acid-and-sensitizer generating agent and a radiation-sensitive acid generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (B).; |
申请公布号 |
US2017075224(A1) |
申请公布日期 |
2017.03.16 |
申请号 |
US201615259160 |
申请日期 |
2016.09.08 |
申请人 |
JSR CORPORATION |
发明人 |
Nakagawa Hisashi;Naruoka Takehiko;Nagai Tomoki |
分类号 |
G03F7/20;G03F7/004;G03F7/11;G03F7/32;C08F220/38;C08F220/18;G03F7/16;G03F7/038;C08F220/28 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Tokyo JP |