| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a MOSFET part and a protection diode part that causes avalanche breakdown at a voltage lower than in the MOSFET part are provided on the same silicon carbide semiconductor substrate.SOLUTION: A semiconductor device 100 in which a MOSFET part 40 and a protection diode part 50 that causes avalanche breakdown at a voltage lower than in the MOSFET part 40 are provided on the same silicon carbide substrate 110 comprises: first projected regions 134 formed in the MOSFET part 40 in a region sandwiched by neighboring trenches 118 so as to project from a body layer 116 toward a drift layer 114; and a plurality of second projected regions 134a formed in the protection diode part 50 so as to project from the body layer 116 toward the drift layer 114, in which a clearance L2 between the neighboring second projected regions 134a is wider than a clearance L1 between the neighboring first projected regions 134. |
