| 摘要 |
PROBLEM TO BE SOLVED: To provide an operation control method of a vapor deposition apparatus for repeatedly manufacturing a laminate composed of a group III-V semiconductor in a batch method, which can reduce an influence of a memory effect caused by a dopant element to manufacture a light emitting element with high efficiency.SOLUTION: For a laminate having an n-type semiconductor layer and a p-type semiconductor layer, serving as a light emitting element, the availability of operation of the vapor deposition apparatus is determined by measuring a p-type dopant amount in the n-type semiconductor layer and/or measuring an n-type dopant amount in the p-type semiconductor layer. |
