| 摘要 |
A highly reliable semiconductor device with high withstand voltage is provided. As means therefor, an impurity concentration in a first JTE region is set to 4.4×1017 cm−3 or higher and 6×1017 cm−3 or lower and an impurity concentration in a second JTE region is set to 2×1017 cm−3 or lower in a case of a Schottky diode, and an impurity concentration in the first JTE region is set to 6×1017 cm−3 or higher and 8×1017 cm−3 or lower and an impurity concentration in the second JTE region is set to 2×1017 cm−3 or lower in a case of a junction barrier Schottky diode. |
