| 摘要 |
Disclosed is a light emitting device including a substrate; a buffer layer on the substrate; a first conductive layer on the buffer layer; an active layer on the first conductive layer; and a third conductive semiconductor layer on the active layer, wherein the first conductive layer includes a first conductive semiconductor layer including a first dopant having a tensile stress, and a second conductive semiconductor layer provided on the first conductive semiconductor layer and including a second dopant having a compressive stress. |
