发明名称 Memory circuit using resistive random access memory arrays in a secure element
摘要 A memory circuit using resistive random access memory (ReRAM) arrays in a secure element. The ReRAM arrays can be configured as content addressable memories (CAMs) or random access memories (RAMs) on the same die, with the control circuitry for performing comparisons of reference patterns and input patterns located outside of the ReRAM arrays. By having ReRAM arrays configured as CAMs and RAMs on the same die, certain reference patterns can be stored in CAMs and others in RAMs depending on security needs. For additional security, a heater can be used to erase reference patterns in the ReRAM arrays when desired.
申请公布号 US9588908(B2) 申请公布日期 2017.03.07
申请号 US201514869262 申请日期 2015.09.29
申请人 Cambou Bertrand F. 发明人 Cambou Bertrand F.
分类号 G06F21/00;G06F12/14;G11C15/04;G11C13/00;H04L9/30;H04L9/14 主分类号 G06F21/00
代理机构 Barclay Damon, LLP 代理人 Barclay Damon, LLP
主权项 1. A secure element comprising: a first die; a first resistive random access memory (ReRAM) array configured as a content addressable memory (CAM) located on the first die, wherein the CAM comprises a first block of a plurality of ReRAM cells configured for storing a first reference pattern and a second block of a plurality of ReRAM cells configured for receiving a first input pattern; a second ReRAM array configured as a random access memory (RAM) located on the first die, wherein the RAM comprises a third block of a plurality of ReRAM cells configured for storing a second reference pattern, a compare circuit for comparing the first block of a plurality of ReRAM cells configured for storing the first reference pattern to the second block of a plurality of ReRAM cells configured for receiving the first input pattern, wherein the compare circuit comprises a plurality of comparators and is located outside of the first ReRAM array and the second ReRAM array; a first heater located on the first ReRAM array configured as a CAM, wherein the first heater is configured to heat the first ReRAM array and erase the first reference pattern; and wherein the first reference pattern comprises a reference authentication cryptographic key stored in the first block of a plurality of ReRAM cells in the CAM and the first input pattern comprises an input authentication cryptographic key provided during an authentication cycle.
地址 Flagstaff AZ US