Method, system and device for complementary non-volatile memory device operation

摘要

Disclosed are methods, systems and devices for operation of dual non-volatile memory devices. In one aspect, a pair of non-volatile memory device coupled in series may be placed in complementary memory states any one of multiple memory states in a write operation by controlling a current and a voltage applied to terminals of the non-volatile memory device.

主权项

1. A device comprising:
a plurality of non-volatile memory elements connected in series, wherein a first of the non-volatile memory elements is connected to a reference node, the plurality of non-volatile memory elements being operable to:
store a first symbol or value in a first mode wherein at least a first of the non-volatile memory elements is in a first impedance state and at least a second of the non-volatile memory elements is in a second impedance state;store a second symbol or value in a second mode wherein at least the second of the non-volatile memory elements is in the first impedance state and at least the first non-volatile memory element is in the second impedance state; the device further comprising: a first conducting element configured to connect the reference node to a charged bit line when the device is in the second mode and disconnect the reference node to the charged bit line when the device is in the first mode: and a second conducting element to connect a voltage source to a first terminal of the first non-volatile memory element and a first terminal of the second non-volatile memory element during a write operation, the second conducting element to apply, at least in part, a first programming signal across the first and second terminals of the first non-volatile memory element and apply, at least in part, a second programming signal across the first and second terminals of the second non-volatile memory element during the write operation.