发明名称 |
Eliminate sawing-induced peeling through forming trenches |
摘要 |
A package includes a device die, a molding material encircling the device die, wherein a top surface of the molding material is substantially level with a top surface of the device die, and a bottom dielectric layer over the device die and the molding material. A plurality of redistribution lines (RDLs) extends into the bottom dielectric layer and electrically coupling to the device die. A top polymer layer is over the bottom dielectric layer, with a trench ring penetrating through the top polymer layer. The trench ring is adjacent to edges of the package. The package further includes Under-Bump Metallurgies (UBMs) extending into the top polymer layer. |
申请公布号 |
US9589903(B2) |
申请公布日期 |
2017.03.07 |
申请号 |
US201514713935 |
申请日期 |
2015.05.15 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Chen Jie;Chen Hsien-Wei |
分类号 |
H01L23/544;H01L23/498;H01L23/00;H01L23/29;H01L23/31;H01L21/56 |
主分类号 |
H01L23/544 |
代理机构 |
Slater Matsil, LLP |
代理人 |
Slater Matsil, LLP |
主权项 |
1. A package comprising:
a device die; a molding material encircling the device die, wherein a top surface of the molding material is substantially level with a top surface of the device die; a bottom dielectric layer over the device die and the molding material; a plurality of redistribution lines (RDLs) extending into the bottom dielectric layer and electrically coupling to the device die; a top polymer layer over the bottom dielectric layer; an intermediate polymer layer between the top polymer layer and the bottom dielectric layer, with a trench ring penetrating through the intermediate polymer layer, wherein the trench ring is adjacent to edges of the package, and the trench ring is filled by the top polymer layer; and Under-Bump Metallurgies (UBMs) extending into the top polymer layer. |
地址 |
Hsin-Chu TW |