Magnetoresistive memory device and manufacturing method of the same

摘要

According to one embodiment, a manufacturing method of a magnetoresistive memory device includes forming a first magnetic layer on a substrate, forming a magnetoresistive effect element on the first magnetic layer, forming a mask on a part of the magnetoresistive effect element, selectively etching the magnetoresistive effect element using the mask, forming a sidewall insulating film on a sidewall of the magnetoresistive effect element exposed by the etching, selectively etching the first magnetic layer using the mask and the sidewall insulating film and forming a deposition layer containing a magnetic material on a sidewall of the first magnetic layer and the sidewall insulating film, and introducing ions into the deposition layer.

主权项

1. A magnetoresistive memory device, comprising:
a first magnetic layer including a first metal provided on a substrate; a first nonmagnetic layer provided on the first magnetic layer; a layered structure including a second magnetic layer provided on the first nonmagnetic layer, a second nonmagnetic layer, and a third magnetic layer; a first sidewall insulating film covering a part of a sidewall of the layered structure; and a second sidewall insulating film provided on the first sidewall insulating film, wherein the second sidewall insulating film includes the first metal and is in contact with the first magnetic layer.