发明名称 |
Liquid crystal display device comprising a capacitance insulating film having a thickness and a dielectric constant |
摘要 |
There is provided a high-definition liquid crystal display device that can prevent flicker due to a reduction in the pixel potential in a low-frequency drive of about 10 Hz to reduce power consumption. The pixel has a TFT formed of Poly-Si as a switching element. In the pixel, a capacitance insulating film is formed on a planar first electrode on which a comb-shaped second electrode is formed. When the film thickness of the insulating film is d and the dielectric constant at 10 Hz frequency is ∈, it is given that ∈d≧5×10−6 m at 10 Hz frequency. The capacitance insulating film does not have a hysteresis characteristic. The refractive index of the capacitance insulating film with respect to a light of a wavelength of 632.8 nm is 1.7 to 2.0. |
申请公布号 |
US9588366(B2) |
申请公布日期 |
2017.03.07 |
申请号 |
US201514811904 |
申请日期 |
2015.07.29 |
申请人 |
Japan Display Inc. |
发明人 |
Kaneko Toshiki;Nakamura Takashi;Tada Masahiro;Tanaka Yukio;Kimura Hiroyuki;Itou Osamu |
分类号 |
G02F1/1362;G02F1/1333;G02F1/1343 |
主分类号 |
G02F1/1362 |
代理机构 |
Typha IP LLC |
代理人 |
Typha IP LLC |
主权项 |
1. A liquid crystal display device comprising:
a TFT substrate including pixels formed between scanning lines extending in a first direction and arranged in a second direction, and video signal lines extending in the second direction and arranged in the first direction; a counter substrate; and a liquid crystal interposed between the TFT substrate and the counter substrate, wherein the pixels are formed at a density of 400 pixels per inch (ppi) or more in the first direction, wherein the pixel has a TFT formed of poly-Si as a switching element, wherein in the pixel, a capacitance insulating film is formed on a first electrode formed in a planar shape on which a comb-shaped second electrode formed, wherein when the film thickness of the capacitance insulating film is d and the dielectric constant at a frequency of 10 Hz is ∈ in an operating environment of 50 degrees Celsius, it is given that ∈d≧5×10−6 m at 10 Hz frequency, wherein the capacitance insulating film does not have a hysteresis characteristic, wherein the refractive index of the capacitance insulating film with respect to a light of a wavelength of 632.8 nm is in the range from 1.7 to 2.0. |
地址 |
Tokyo JP |