Semiconductor device having nanowire channel

摘要

A semiconductor device is provided as follows. A fin-type pattern includes first and second oxide regions in an upper portion of the fin-type pattern. The fin-type pattern is extended in a first direction. A first nanowire is extended in the first direction and spaced apart from the fin-type pattern. A gate electrode surrounds a periphery of the first nanowire, extending in a second direction intersecting the first direction. The gate electrode is disposed on a region of the fin-type pattern. The region is positioned between the first and the second oxide regions. A first source/drain is disposed on the first oxide region and connected with an end portion of the first nanowire.

主权项

1. A semiconductor device, comprising:
a fin-type pattern protruded from a substrate, wherein the fin-type pattern is extended in a first direction, a first oxide region and a second oxide region on an upper portion of the fin-type pattern wherein the first oxide region and the second oxide region are spaced apart from each other and separated from each other; a first nanowire extended in the first direction and spaced apart from the fin-type pattern; a gate electrode surrounding the first nanowire and extending in a second direction intersecting the first direction, wherein the gate electrode is disposed on a region of the fin-type pattern and wherein the region is positioned between the first oxide region and the second oxide region; a first source/drain disposed on the first oxide region and connected with an end portion of the first nanowire; and a second source/drain disposed on the second oxide region and connected with another end portion of the first nanowire.