| 发明名称 | Semiconductor device with improved programming reliability | ||
| 摘要 | A semiconductor memory device includes a memory string including a first cells portion and a second cells portion each including a multiple of memory cells, the second cells portion being disposed over the first cells portion, and a control logic configured to control a peripheral circuit such that each of at least two memory cells in a top of the first cells portion and each of at least two memory cells in a bottom of the second cells portion is programmed to have a smaller data bit than remaining memory cells in the first and second cells portions. | ||
| 申请公布号 | US9589647(B1) | 申请公布日期 | 2017.03.07 |
| 申请号 | US201615055885 | 申请日期 | 2016.02.29 |
| 申请人 | SK hynix Inc. | 发明人 | Ahn Jung Ryul;Seo Ji Hyun;Chung Sung Yong |
| 分类号 | G11C16/04;G11C16/10;G11C11/56;H01L27/115 | 主分类号 | G11C16/04 |
| 代理机构 | William Park & Associates Ltd. | 代理人 | William Park & Associates Ltd. |
| 主权项 | 1. A semiconductor memory device comprising: a memory string including a first cells portion and a second cells portion, each including a multiple of memory cells, the second cells portion being disposed over the first cells portion; a peripheral circuit configured to program the multiple of the memory cells in a programming operation; and a control logic configured to control the peripheral circuit in the programming operation such that each of at least two memory cells in a top of the first cells portion and each of at least two memory cells in a bottom of the second cells portion is programmed to have a smaller data bit than remaining memory cells in the first and second cells portions. | ||
| 地址 | Icheon-si KR | ||