发明名称 CONDUCTIVE OXIDE FILM, DISPLAY DEVICE, AND METHOD FOR FORMING CONDUCTIVE OXIDE FILM
摘要 One embodiment of the present invention provides a conductive oxide film having high conductivity and high transmittance of visible light. The conductive oxide film having high conductivity and high transmittance of visible light can be obtained by forming a conductive oxide film at a high substrate temperature in the film formation and subjecting the conductive oxide film to nitrogen annealing treatment. The conductive oxide film has a crystal structure in which c-axes are aligned in a direction perpendicular to a surface of the film.
申请公布号 US2017058393(A1) 申请公布日期 2017.03.02
申请号 US201615342332 申请日期 2016.11.03
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 YAMAZAKI Shunpei;OOTA Masashi
分类号 C23C14/08;G06F3/044;G06F3/045;H01L51/56;C23C14/58;H01L51/00;H01L51/52;G06F3/041;C23C14/34 主分类号 C23C14/08
代理机构 代理人
主权项 1. A method for forming a conductive oxide film comprising the steps of: forming a conductive oxide film over a substrate by a sputtering method at a substrate temperature of 200° C. or higher; and performing nitrogen annealing treatment on the conductive oxide film.
地址 Atsugi-shi JP