发明名称 |
CONDUCTIVE OXIDE FILM, DISPLAY DEVICE, AND METHOD FOR FORMING CONDUCTIVE OXIDE FILM |
摘要 |
One embodiment of the present invention provides a conductive oxide film having high conductivity and high transmittance of visible light. The conductive oxide film having high conductivity and high transmittance of visible light can be obtained by forming a conductive oxide film at a high substrate temperature in the film formation and subjecting the conductive oxide film to nitrogen annealing treatment. The conductive oxide film has a crystal structure in which c-axes are aligned in a direction perpendicular to a surface of the film. |
申请公布号 |
US2017058393(A1) |
申请公布日期 |
2017.03.02 |
申请号 |
US201615342332 |
申请日期 |
2016.11.03 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
YAMAZAKI Shunpei;OOTA Masashi |
分类号 |
C23C14/08;G06F3/044;G06F3/045;H01L51/56;C23C14/58;H01L51/00;H01L51/52;G06F3/041;C23C14/34 |
主分类号 |
C23C14/08 |
代理机构 |
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代理人 |
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主权项 |
1. A method for forming a conductive oxide film comprising the steps of:
forming a conductive oxide film over a substrate by a sputtering method at a substrate temperature of 200° C. or higher; and performing nitrogen annealing treatment on the conductive oxide film. |
地址 |
Atsugi-shi JP |