| 摘要 |
A semiconductor device includes a semiconductor substrate divided into a first area and a second area, the semiconductor substrate including a first dopant of a first type, a first well formed to a first depth in the first area of the semiconductor substrate, the first well including a second dopant of a second type, wherein the second type is different from the first type, a second well including a third dopant of the first type, the second well being surrounded by the first well, and a pipe gate formed on the first area of the semiconductor substrate, the pipe gate being electrically connected to the second well. |
| 主权项 |
1. A semiconductor device comprising:
a semiconductor substrate divided into a first area and a second area, the semiconductor substrate including a first dopant of a first type; a first well formed to a first depth in the first area of the semiconductor substrate, the first well including a second dopant of a second type, wherein the second type is different from the first type; a second well including a third dopant of the first type, the second well being surrounded by the first well; a pipe gate formed on the first area of the semiconductor substrate, the pipe gate being electrically connected to the second well; a channel layer including a pipe channel layer, a source-side channel layer, and a drain-side channel layer, wherein the pipe channel layer is disposed in the pipe gate, wherein the source-side channel layer is coupled to the pipe channel layer, wherein the drain-side channel layer is coupled to the pipe channel layer; source-side conductive patterns surrounding the source-side channel layer, wherein the source-side conductive patterns are disposed at different levels from each other, and drain-side conductive patterns surrounding the drain-side channel layer, wherein the drain-side conductive patterns are disposed at different levels from each other. |
