CMOS-MEMS INTEGRATION USING METAL SILICIDE FORMATION

摘要

A method and system for forming a MEMS device are disclosed. In a first aspect, the method comprises providing a conductive material over at least a portion of a top metal layer of a base substrate, patterning the conductive material and the at least a portion of the top metal layer, and bonding the conductive material with a device layer of a MEMS substrate via metal silicide formation. In a second aspect, the MEMS device comprises a MEMS substrate, wherein the MEMS substrate includes a handle layer, a device layer, and an insulating layer in between. The MEMS device further comprises a base substrate, wherein the base substrate includes a top metal layer and a conductive material over at least a portion of the top metal layer, wherein the conductive material is bonded with the device layer via metal silicide formation.

主权项

1. A method for forming a MEMS device, wherein the MEMS device includes a MEMS substrate and a base substrate, wherein the base substrate includes a top metal layer and the MEMS substrate includes a handle layer, a device layer, and an insulating layer in between, the method comprising:
providing a conductive material over at least a portion of the top metal layer; patterning the conductive material and the at least a portion of the top metal layer; and bonding the conductive material with the device layer via metal silicide formation.