发明名称 MEMORY SYSTEM AND METHOD OF CONTROLLING NONVOLATILE MEMORY
摘要 According to one embodiment, a controller writes first data requested to be written from a host into a third block among a plurality of first blocks in a case where a temperature of a nonvolatile memory is within a certain range. In a case where the temperature of the nonvolatile memory is out of the certain range, the controller determines a degree of wear of the third block and writes the first data into a second block in a case where the degree of wear of the third block is more than a threshold.
申请公布号 US2017060425(A1) 申请公布日期 2017.03.02
申请号 US201615062849 申请日期 2016.03.07
申请人 Kabushiki Kaisha Toshiba 发明人 SUNATA Tetsuya;IWAI Daisuke;HARA Keigo;SHIRAKAWA Masanobu
分类号 G06F3/06;G11C16/26;G11C16/10 主分类号 G06F3/06
代理机构 代理人
主权项 1. A memory system comprising: a nonvolatile memory that includes a plurality of blocks, the plurality of blocks including a plurality of first blocks and at least one second block, the second block being different from the first block, the second block including a plurality of memory cells that stores data of one bit; and a controller configured to: in a case where a first temperature that is a temperature of the nonvolatile memory is within a certain range, write first data designated by a write request from a host into a third block, the third block being a block selected from among the first blocks; in a case where the first temperature is out of the certain range and a first value of the third block is more than a threshold, write the first data into the second block, the first value being a degree of wear; and in a case where the first temperature is out of the certain range and the first value of the third block is less than the threshold, write the first data into the third block.
地址 Minato-ku JP