发明名称 METHODS OF OPERATING FERROELECTRIC MEMORY CELLS, AND RELATED FERROELECTRIC MEMORY CELLS AND CAPACITORS
摘要 Methods of operating a ferroelectric memory cell. The method comprises applying one of a positive bias voltage and a negative bias voltage to a ferroelectric memory cell comprising a capacitor including a top electrode, a bottom electrode, a ferroelectric material between the top electrode and the bottom electrode, and an interfacial material between the ferroelectric material and one of the top electrode and the bottom electrode. The method further comprises applying another of the positive bias voltage and the negative bias voltage to the ferroelectric memory cell to switch a polarization of the ferroelectric memory cell, wherein an absolute value of the negative bias voltage is different from an absolute value of the positive bias voltage. Ferroelectric memory cells are also described.
申请公布号 US2017062037(A1) 申请公布日期 2017.03.02
申请号 US201615241550 申请日期 2016.08.19
申请人 Micron Technology, Inc. 发明人 Nicholes Steven C.;Chavan Ashonita A.;Rocklein Matthew N.
分类号 G11C11/22;H01L27/115 主分类号 G11C11/22
代理机构 代理人
主权项 1. A method of operating a ferroelectric memory cell, the method comprising: applying one of a positive bias voltage or a negative bias voltage to a ferroelectric memory cell comprising a ferroelectric capacitor; and applying another of the positive bias voltage or the negative bias voltage to the ferroelectric memory cell to switch a polarization of the ferroelectric memory cell, the negative bias voltage having a different magnitude than the positive bias voltage.
地址 Boise ID US
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