SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A minute transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A transistor having a high on-state current is provided. A semiconductor device including the transistor is provided. A semiconductor device having a high degree of integration is provided. A semiconductor device including an oxide semiconductor; a second insulator; a second conductor; a third conductor; a fourth conductor; a fifth conductor; a first conductor and a first insulator embedded in an opening portion formed in the second insulator, the second conductor, the third conductor, the fourth conductor, and the fifth conductor; a region where a side surface and a bottom surface of the second conductor are in contact with the fourth conductor; and a region where a side surface and a bottom surface of the third conductor are in contact with the fifth conductor.

主权项

1. A semiconductor device comprising:
an oxide semiconductor; a first conductor; a second conductor; a third conductor; a fourth conductor; a fifth conductor; a first insulator; a second insulator; and a third insulator, wherein the second insulator is provided with an opening portion penetrating through the second insulator, whereina region of a bottom surface of the opening portion is in contact with the oxide semiconductor, whereina region of the first insulator is in contact with a side surface and the bottom surface of the opening portion, whereina region of the first conductor faces the side surface and the bottom surface of the opening portion with the first insulator positioned therebetween, whereinthe second conductor, the third conductor, the fourth conductor, and the fifth conductor are positioned between the oxide semiconductor and the second insulator, whereina region of a side surface of the second conductor and a bottom surface of the second conductor is in contact with the fourth conductor, whereina region of a side surface of the third conductor and a bottom surface of the third conductor is in contact with the fifth conductor, and whereina region of the third insulator is in contact with the oxide semiconductor.