发明名称 |
JFET AND LDMOS TRANSISTOR FORMED USING DEEP DIFFUSION REGIONS |
摘要 |
A power integrated circuit includes a double-diffused metal-oxide-semiconductor (LDMOS) transistor formed in a first portion of the semiconductor layer with a channel being formed in a first body region. The power integrated circuit includes a first deep diffusion region formed in the first deep well under the first body region and in electrical contact with the first body region and a second deep diffusion region formed in the first deep well under the drain drift region and in electrical contact with the first body region. The first deep diffusion region and the second deep diffusion region together form a reduced surface field (RESURF) structure in the LDMOS transistor. |
申请公布号 |
US2017062415(A1) |
申请公布日期 |
2017.03.02 |
申请号 |
US201615258759 |
申请日期 |
2016.09.07 |
申请人 |
Alpha and Omega Semiconductor Incorporated |
发明人 |
Mallikarjunaswamy Shekar |
分类号 |
H01L27/085;H01L21/8234;H01L29/06;H01L29/808;H01L29/36;H01L29/66;H01L29/78;H01L21/265;H01L29/10 |
主分类号 |
H01L27/085 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Sunnyvale CA US |