发明名称 SEMICONDUCTOR DEVICES HAVING AIR SPACERS AND METHODS OF MANUFACTURING THE SAME
摘要 A semiconductor device includes first and second bit line structures on a substrate and spaced apart from each other, a via plug partially filling between the first and second bit line structures, a via pad in contact with an upper surface of the via plug and an upper sidewall of the first bit line structure, the via pad being spaced apart from an upper portion of the second bit line structure, a first cavity filled with air being between the via plug and the first bit line structure and a second cavity filled with air between the via plug and the second bit line structure, A gap capping spacer having a first portion on the upper sidewall of the first bit line structure and a second portion covers the first air spacer. A horizontal width of the first portion is smaller than that of the second portion.
申请公布号 US2017062347(A1) 申请公布日期 2017.03.02
申请号 US201615095327 申请日期 2016.04.11
申请人 Samsung Electronics Co., Ltd. 发明人 KIM Kyung-Eun;KIM Yongkwan;JANG Semyeong;CHOI Jaehyoung;HWANG Yoosang;KIM Bong-Soo
分类号 H01L23/532;H01L23/522;H01L23/528;H01L27/108 主分类号 H01L23/532
代理机构 代理人
主权项 1. A semiconductor device, comprising: a first bit line structure and a second bit line structure on a substrate, the first and second bit line structures being spaced apart from each other; a via plug partially filling an area between the first bit line structure and the second bit line structure; a via pad in contact with an upper surface of the via plug and an upper sidewall of the first bit line structure, the via pad being spaced apart from an upper portion of the second bit line structure,the via plug and the first bit line structure being separated from each other by a first cavity filled with air, andthe via plug and the second bit line structure being separated from each other by a second cavity filled with air; and a gap capping spacer having a first portion on the upper sidewall of the first bit line structure and a second portion covering the first cavity, a horizontal width of the first portion of the gap capping spacer being smaller than a horizontal width of the second portion of the gap capping spacer.
地址 Suwon-si KR