| 摘要 |
According to one embodiment, a semiconductor memory device includes a stacked body, an insulating layer, and a columnar portion. The stacked body includes a plurality of conductive layers arranged along a first direction intersecting with a major surface of the base. The columnar portion includes an insulating member, a semiconductor layer, a semiconductor film and a memory film. The insulating layer includes a first insulating part, and a second insulating part provided on the first insulating part. The first insulating part includes a first side surface intersecting with a second direction intersecting with the first direction. The second insulating part includes a second side surface intersecting with the second direction. A position in the second direction of the first side surface is different from a position in the second direction of the second side surface. |
| 主权项 |
1. A semiconductor memory device comprising:
a stacked body provided on a base, and including a plurality of conductive layers arranged along a first direction intersecting with a major surface of the base; an insulating layer provided on the stacked body; and a columnar portion provided in the stacked body and the insulating layer, the columnar portion including
an insulating member extending in the first direction through the stacked body and the insulating layer,a semiconductor layer provided on the insulating member in the insulating layer,a semiconductor film provided between the insulating member and the stacked body, anda memory film provided between the semiconductor film and the stacked body, and between the semiconductor film and the insulating layer, the insulating layer including a first insulating part, and a second insulating part provided on the first insulating part, the first insulating part including a first side surface intersecting with a second direction intersecting with the first direction, the first side surface opposing the columnar portion, the second insulating part including a second side surface intersecting with the second direction, the second insulating part opposing the columnar portion, and a position in the second direction of the first side surface being different from a position in the second direction of the second side surface. |
