| 发明名称 |
MEMORY DEVICE, MEMORY SYSTEM, METHOD OF OPERATING MEMORY DEVICE, AND METHOD OF OPERATING MEMORY SYSTEM |
| 摘要 |
A memory device, comprising: a memory cell array including a plurality of NAND strings, each NAND string including a plurality of memory cells respectively connected to a plurality of word lines vertically stacked on a substrate; and a control logic configured to generate a pre-programming control signal for memory cells of a first NAND string of the NAND strings such that, before erasing the memory cells of the first NAND string, pre-programming voltages applied to the word lines coupled to the corresponding memory cells of the first NAND string vary based on an operating characteristic of the corresponding memory cells. |
| 申请公布号 |
US2017062059(A1) |
申请公布日期 |
2017.03.02 |
| 申请号 |
US201615245162 |
申请日期 |
2016.08.23 |
| 申请人 |
KIM Yoon;KIM Dong-chan;LEE Ji-sang |
发明人 |
KIM Yoon;KIM Dong-chan;LEE Ji-sang |
| 分类号 |
G11C16/14;G11C16/34;G11C16/08;G11C16/04 |
主分类号 |
G11C16/14 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory device, comprising:
a memory cell array including a plurality of NAND strings, each NAND string including a plurality of memory cells respectively connected to a plurality of word lines vertically stacked on a substrate; and a control logic configured to generate a pre-programming control signal for memory cells of a first NAND string of the NAND strings such that, before erasing the memory cells of the first NAND string, pre-programming voltages applied to the word lines coupled to the corresponding memory cells of the first NAND string vary based on an operating characteristic of the corresponding memory cells. |
| 地址 |
Yongin-si KR |
