发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR LASER DEVICE INCLUDING WAVELENGTH CONVERTING MEMBER AND LIGHT TRANSMISSIVE MEMBER
摘要 The light emitting device according to the present invention comprises a laser diode; a wavelength converting member which is configured to convert a wavelength of a light emitted from the laser diode; and a support member which is configured to support the wavelength converting member so that the light passes through two surfaces of the wavelength converting member. The wavelength converting member comprises a fluorescent material and a binder. At least one light transmissive member is disposed on at least one of these two surfaces of the wavelength converting member. The binder has a melting point higher than a melting point of the light transmissive member. The light transmissive member is fixed to the support member by fusion bonding.
申请公布号 US2017063033(A1) 申请公布日期 2017.03.02
申请号 US201615352248 申请日期 2016.11.15
申请人 NICHIA CORPORATION 发明人 MORIZUMI Naoto;HAYASHI Yukihiro
分类号 H01S5/022;H01S5/00 主分类号 H01S5/022
代理机构 代理人
主权项 1. A method for manufacturing a semiconductor laser device, the method comprising: providing a laser diode; providing a support member that has a through hole; disposing a wavelength converting member in the through-hole, wherein the wavelength converting member is configured to convert a wavelength of light emitted from the laser diode, wherein the wavelength converting member comprises a fluorescent material and a binder, and wherein the wavelength converting member is configured such that light enters the wavelength converting member via a first surface of the wavelength converting member, and exits the wavelength converting member via a second surface of the wavelength converting member; disposing a light transmissive member on the second surface of the wavelength converting member, wherein the light transmissive member comprises a fluorescent material and has a melting point lower than a melting point of the binder; fixing the light transmissive member to an inner wall of the through-hole of the support member and the second surface of the wavelength converting member by fusion bonding.
地址 Anan-shi JP