| 摘要 |
PROBLEM TO BE SOLVED: To inhibit a drop or adhesion of a reaction product to a deposition target substrate.SOLUTION: A CVD apparatus 1 comprises: an internal space 100a; a housing chamber 10 fro housing a substrate such that a film formation surface faces upward on a lower side (fifth region A5) of the internal space 100a; a material gas supply part 200 for supplying a material gas of the film in the internal space 100a along a first direction from a lateral of the substrate toward the substrate; a block gas supply part 300 for supplying a block gas to the internal space 100a along a second direction from above to below, for inhibiting transfer of the material gas upward; a heating mechanism 500 fro heating the substrate; flow ordering parts 170 (first partition member through third partition member) which is provided in an upper side of the internal space 100a so as to extend in a -z direction and cross an x direction, for partitioning the upper side of the internal space 100a into a first region A1 through a fourth region A4; and a cooling mechanism 700 for cooling the flow ordering parts 170. |
