| 摘要 |
This joining method uses flakes formed from metal or metal oxide fine particles using mechanical stress, and in the plasma processing process of a step (S6), plasma processing is carried out on a semiconductor chip and a frame between which such flakes are interposed. The contact surface area between flakes is increased, and residual stress is applied within the flakes. Further, due to plasma processing, bonding occurs at the atomic level, and thus joining capability in the horizontal direction and the vertical direction is enhanced. In addition, compared to conventional thermal joining processing (in which plasma processing is not carried out), processing time can be reduced, and the present invention creates an effect of contributing greatly to productivity through improved processing efficiency. |
