发明名称 半導体装置の製造方法
摘要 Provided is a semiconductor device having improved performance and an improved manufacturing yield. Over photodiodes formed in a semiconductor substrate, a plurality of first to third embedded insulating films are stacked to form a waveguide for light incident on each of the photodiodes. The first embedded insulating film is formed simultaneously with plugs when the plugs are formed. The second embedded insulating film is formed simultaneously with first wires when the first wires are formed. The third embedded insulating film is formed simultaneously with second wires when the second wires are formed.
申请公布号 JP6087107(B2) 申请公布日期 2017.03.01
申请号 JP20120238069 申请日期 2012.10.29
申请人 ルネサスエレクトロニクス株式会社 发明人 川村 武志
分类号 H01L27/14;H01L21/768;H01L27/146 主分类号 H01L27/14
代理机构 代理人
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