| 摘要 |
PROBLEM TO BE SOLVED: To inexpensively provide a GaOsubstrate on the surface of which an unevenness suitable for performing an LEPS (Lateral Epitaxy on the Patterned Substrate) method enabling a film to be formed, and to provide a gallium oxide single crystal including dislocations necessary to provide the GaOsubstrate.SOLUTION: A gallium oxide single crystal 13 has dislocation density of 1×10to 3×10pieces/cm. The gallium oxide single crystal 13 is produced by an EFG (Edge-defined Film-fed Growth) method and includes dislocations existing along the pulling direction of the gallium oxide single crystal. A neck part 13a of the gallium oxide single crystal 13 is 0.4-1.3 mm. A gallium oxide single crystal substrate 21 is formed from the gallium oxide single crystal 13. Etching is applied to the surface of the substrate, and thereby, a groove-like etch pit is formed in a place where a dislocation exists. As a result, an unevenness is formed in the surface of the substrate. |
