POWER SWITCHING CELL WITH NORMALLY CONDUCTING FIELD-EFFECT TRANSISTORS

摘要

A power switching cell with normally on field-effect transistors comprises a current switch receiving the control input signal over an activation input and a power transistor for switching a high voltage VDD applied to its drain, to its source that is connected to the output port of the cell. The control of the gate of the power transistor whose source is floating, according to the input signal, is provided by a self-biasing circuit connected between its gate and source. The current switch is connected between the self-biasing circuit and a zero or negative reference voltage. The self-biasing circuit comprises a transistor whose source or drain is connected to the gate or source of the power transistor. The gate of this transistor is biased by a resistor connected between its gate and source, and between the current switch and the source. The transistors are HEMT transistors using GaN or AsGa technology.