Apparatus for performing a plasma chemical vapour deposition process

摘要

The invention relates to an apparatus for performing a plasma chemical vapor deposition process. The apparatus comprises a mainly cylindrical resonator being provided with an outer cylindrical wall enclosing a resonant cavity extending in a circumferential direction around a cylindrical axis. The resonator is further provided with side wall portions bounding the resonant cavity in the cylindrical direction, and with a slit configuration extending in a circumferential direction around the cylindrical axis providing access from the resonant cavity radially inwardly. Further, the slit configuration includes slit sections that are mutually offset in the cylindrical direction.

主权项

1. An apparatus for performing a plasma chemical vapor deposition process, comprising:
a mainly cylindrical resonator being provided with an outer cylindrical wall and an inner cylindrical wall, enclosing an annular resonant cavity in a radial direction, the resonator extending in a circumferential direction around a cylindrical axis, the resonator further being provided with side wall portions bounding the resonant cavity in the cylindrical direction, and the inner cylindrical wall provided with a slit configuration extending in a circumferential direction around the cylindrical axis providing access from the resonant cavity radially inwardly, wherein the slit configuration includes slit sections that are mutually offset in the cylindrical direction, and wherein the slit sections are also staggered in the circumferential direction linking up in the circumferential direction as a closed ring, and wherein a substrate tube is received in a tubular inner space, radially inwardly from the resonant cavity, and wherein the substrate tube is arranged to rotate, during operation of the apparatus, with respect to the cylindrical axis of the resonator.