Solar cell element

摘要

A solar cell element includes: a transparent body; a MgxAg1-x layer (0.001≦x≦0.045) having a thickness (2-13 nm); a ZnO layer having an arithmetical mean (Ra: 20-870 nm); and a transparent conductive layer. A photoelectric conversion layer including n-type and p-type layers further includes n-side and p-side electrodes. The ZnO layer is composed of ZnO columnar crystal grains grown on the MgxAg1-x layer, and each ZnO grain has a longitudinal direction along a normal line of the body, has a width increasing from the MgxAg1-x layer toward the transparent conductive layer, has a width which appears by cutting each ZnO grain along the normal line, and has a R2/R1 ratio (1.1-1.8). R1 represents the width of one end of the ZnO grain, and the one end is in contact with the surface of the MgxAg1-x layer, and R2 represents the width of the other end of the ZnO grain.

主权项

1. A method for generating an electric power using a solar cell element, the method comprising:
(a) preparing the solar cell element comprising:
a transparent substrate body;a MgxAg1-x layer;a ZnO layer;a transparent conductive layer;a photoelectric conversion layer including an n-type semiconductor layer and a p-type semiconductor layer;an n-side electrode; anda p-side electrode;wherein the transparent substrate body, the MgxAg1-x layer, the ZnO layer, the transparent conductive layer, and the photoelectric conversion layer are stacked in this order;the n-side electrode is electrically connected to the n-type semiconductor layer;the p-side electrode is electrically connected to the p-type semiconductor layer;x represents a value of not less than 0.001 and not more than 0.045;the MgxAg1-x layer has a thickness of not less than 2 nanometers and not more than 13 nanometers;the ZnO layer has an arithmetic mean roughness of not less than 20 nanometers and not more than 870 nanometers;the ZnO layer is composed of a plurality of ZnO columnar crystal grains grown on a surface of the MgxAg1-x layer;each ZnO columnar crystal grain has a longitudinal direction along a normal line direction of the transparent substrate body;each ZnO columnar crystal grain has a width which increases from the MgxAg1-x layer toward the transparent conductive layer;the width of each ZnO columnar crystal grain appears by cutting each ZnO columnar crystal grain along the normal line direction of the transparent substrate body; andeach ZnO columnar crystal grain has a R2/R1 ratio of not less than 1.1 and not more than 1.8;where R1 represents a width of a first end of the ZnO columnar crystal grain, the first end being in contact with the surface of the MgxAg1-x layer; andR2 represents a width of a second end of the ZnO columnar crystal grain; and (b) irradiating the photoelectric conversion layer with light through the transparent substrate body, the MgxAg1-x layer, the ZnO layer, and the transparent conductive layer, so as to generate electric power between the n-side electrode and the p-side electrode.