Nonvolatile memory device using two-dimensional material and method of manufacturing the same

摘要

Example embodiments relate to nonvolatile memory devices using a 2D material, and methods of manufacturing the nonvolatile memory device. The nonvolatile memory device includes a channel layer formed on a substrate, a gate stack that includes a gate electrode, source and drain electrodes. The channel layer has a threshold voltage greater than that of a graphene layer, and the gate stack includes a 2D material floating gate that is not in contact with the channel layer. The channel layer includes first and second material layers and a first barrier layer disposed between the first and second material layers, and the first and second material layers may contact the first barrier layer.

主权项

1. A nonvolatile memory device comprising:
a substrate; a channel layer on the substrate; a gate stack on the channel layer, the gate stack including a gate electrode; a source electrode on the channel layer; and a drain electrode on the channel layer, wherein the channel layer has a threshold voltage that is greater than a threshold voltage of a graphene layer, and the gate stack includes a 2D material floating gate, and the 2D material floating gate does not contact the channel layer.