Memory device and method for manufacturing the same

摘要

A memory device having an array area and a periphery area is provided. The memory device includes a substrate, an isolation layer formed in the substrate, a first doped region formed on the isolation layer in the array area, a second doped region formed on the first doped region, a metal silicide layer formed on the second doped region, and a metal silicide oxide layer formed on the metal silicide layer.

主权项

1. A memory device having an array area and a periphery area, comprising:
a substrate; an isolation layer formed in the substrate; a first doped region formed on the isolation layer in the array area; a second doped region formed on the first doped region; a first metal silicide layer formed on the second doped region; a metal silicide oxide layer formed on the first metal silicide layer; a P-well formed in the substrate in the periphery area; a N-well formed adjacent to the P-well in the periphery area; two first electrodes formed in the P-well; a first gate oxide layer formed on the P-well; two second electrodes formed in the N-well; a second gate oxide layer formed on the N-well; a first doped polysilicide layer formed on the first gate oxide layer; a second doped polysilicide layer formed on the second gate oxide layer; and a plurality of second metal silicide layers formed on the first doped polysilicide layer and the second doped polysilicide layer; wherein portions of the isolation layer is formed between the P-well and the N-well.