发明名称 |
Electronic component metal material and method for manufacturing the same |
摘要 |
There are provided an electronic component metal material which has low insertability/extractability, low whisker formability, and high durability, and a method for manufacturing the metal material. The electronic component metal material 10 includes a base material 11 , an A layer 14 constituting an outermost surface layer on the base material 11 and formed of Sn, In or an alloy thereof, and a B layer 13 constituting a middle layer provided between the base material 11 and the A layer 14 and formed of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir or an alloy thereof, wherein the outermost surface layer (A layer) 14 has a thickness of 0.002 to 0.2 μm, and the middle layer (B layer) 13 has a thickness larger than 0.3 μm. |
申请公布号 |
US9580783(B2) |
申请公布日期 |
2017.02.28 |
申请号 |
US201214432978 |
申请日期 |
2012.10.31 |
申请人 |
JX Nippon Mining & Metals Corporation |
发明人 |
Shibuya Yoshitaka;Fukamachi Kazuhiko;Kodama Atsushi |
分类号 |
B32B15/00;C22F1/00;C25D5/10;C25D5/12;C25D5/50;C25D3/04;C25D3/12;C25D3/20;C25D3/38;C25D3/46;C25D3/48;C25D3/50 |
主分类号 |
B32B15/00 |
代理机构 |
Drinker Biddle & Reath LLP |
代理人 |
Drinker Biddle & Reath LLP |
主权项 |
1. An electronic component metal material having low whisker formability and high durability, comprising:
a base material; an A layer constituting an outermost surface layer on the base material and being formed of Sn, In or an alloy thereof; a B layer constituting a middle layer provided between the base material and the A layer and being formed of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir or an alloy thereof, and satisfying the following (a) or (b): (a) wherein the outermost surface layer (A layer) has a thickness of 0.002 to 0.2 μm; and the middle layer (B layer) has a thickness larger than 0.3 μm, (b) wherein the outermost surface layer (A layer) has a deposition amount of Sn, In of 1 to 150 μg/cm2; and the middle layer (B layer) has a deposition amount of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir of larger than 330 μg/cm2, and (c) wherein the outermost surface layer (A layer) has a surface arithmetic average height (RA) of 0.1 μm or lower. |
地址 |
Tokyo JP |