发明名称 Electronic component metal material and method for manufacturing the same
摘要 There are provided an electronic component metal material which has low insertability/extractability, low whisker formability, and high durability, and a method for manufacturing the metal material. The electronic component metal material 10 includes a base material 11 , an A layer 14 constituting an outermost surface layer on the base material 11 and formed of Sn, In or an alloy thereof, and a B layer 13 constituting a middle layer provided between the base material 11 and the A layer 14 and formed of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir or an alloy thereof, wherein the outermost surface layer (A layer) 14 has a thickness of 0.002 to 0.2 μm, and the middle layer (B layer) 13 has a thickness larger than 0.3 μm.
申请公布号 US9580783(B2) 申请公布日期 2017.02.28
申请号 US201214432978 申请日期 2012.10.31
申请人 JX Nippon Mining & Metals Corporation 发明人 Shibuya Yoshitaka;Fukamachi Kazuhiko;Kodama Atsushi
分类号 B32B15/00;C22F1/00;C25D5/10;C25D5/12;C25D5/50;C25D3/04;C25D3/12;C25D3/20;C25D3/38;C25D3/46;C25D3/48;C25D3/50 主分类号 B32B15/00
代理机构 Drinker Biddle & Reath LLP 代理人 Drinker Biddle & Reath LLP
主权项 1. An electronic component metal material having low whisker formability and high durability, comprising: a base material; an A layer constituting an outermost surface layer on the base material and being formed of Sn, In or an alloy thereof; a B layer constituting a middle layer provided between the base material and the A layer and being formed of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir or an alloy thereof, and satisfying the following (a) or (b): (a) wherein the outermost surface layer (A layer) has a thickness of 0.002 to 0.2 μm; and the middle layer (B layer) has a thickness larger than 0.3 μm, (b) wherein the outermost surface layer (A layer) has a deposition amount of Sn, In of 1 to 150 μg/cm2; and the middle layer (B layer) has a deposition amount of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir of larger than 330 μg/cm2, and (c) wherein the outermost surface layer (A layer) has a surface arithmetic average height (RA) of 0.1 μm or lower.
地址 Tokyo JP