Asymmetric finFET memory access transistor,申请号US201514865276-传众专利搜索

发明名称	Asymmetric finFET memory access transistor
摘要	A field effect transistor device comprises a semiconductor substrate, a doped source layer arranged on the semiconductor substrate, an insulator layer arranged on the doped source layer, a fin arranged on the insulator layer, a source region extension portion extending from the doped source layer and through the fin, a gate stack arranged over a channel region of the fin and adjacent to the source region extension portion, a drain region arranged on the fin adjacent to the gate stack; the drain region having a graduated doping concentration.
申请公布号	US9583624(B1)	申请公布日期	2017.02.28
申请号	US201514865276	申请日期	2015.09.25
申请人	INTERNATIONAL BUSINESS MACHINES CORPORATION	发明人	Lam Chung H.;Lin Chung-hsun;Lu Darsen D.;Oldiges Philip J.
分类号	H01L21/70;H01L29/78;H01L29/66	主分类号	H01L21/70
代理机构	Cantor Colburn LLP	代理人	Cantor Colburn LLP ;Alexanian Vazken
主权项	1. A field effect transistor device, comprising: a semiconductor substrate; a doped source layer arranged on the semiconductor substrate; an insulator layer arranged on the doped source layer; a fin arranged on the insulator layer; a source region extension portion extending from the doped source layer and through the fin; a gate stack arranged over a channel region of the fin and adjacent to the source region extension portion; a drain region arranged on the fin adjacent to the gate stack; the drain region having a graduated doping concentration.
地址	Armonk NY US