RRAM process with roughness tuning technology

摘要

The present invention relates to metal oxide based memory devices and methods for manufacturing such devices; and more particularly to memory devices having data storage materials based on metal oxide compounds fabricated with a roughness tuning process including an ion bombardment step of a bottom electrode surface prior to formation of a memory element on the bottom electrode surface. Ion bombardment improves the flatness of the bottom electrode which is beneficial in achieving a more uniform electrical field during operation, which improves device reliability.

主权项

1. A memory cell, comprising:
an insulation layer having an upper surface and an indentation in the upper surface; an interlayer conductor in a via extending through the insulation layer in the indentation, wherein a first end of the interlayer conductor is located proximal to a bottom surface of the insulation layer and the second end of the interlayer conductor located distal to the bottom surface comprises an electrode surface recessed below the upper surface of the insulation layer; a memory element in electrical contact with the electrode surface; and a conductor over and in contact with the memory element within the indentation; wherein the electrode surface has a surface roughness RA less than 3nm, and the indentation includes a concave sidewall portion above the electrode surface extending outwardly from the interlayer conductor toward the upper surface.