Lowering tungsten resistivity by replacing titanium nitride with titanium silicon nitride

摘要

Semiconductor devices, methods and apparatus for forming the same are provided. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. The gate electrode stack includes a conductive film layer on a gate dielectric layer, a refractory metal silicon nitride film layer on the conductive film layer, and a tungsten film layer on the refractory metal silicon nitride film layer. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal silicon nitride film layer on the conductive film layer and depositing a tungsten film layer on the refractory metal silicon nitride film layer.

主权项

1. A method of depositing a tungsten film layer, comprising:
forming a conductive film layer on a substrate; forming a titanium nitride film layer on the conductive film layer; forming a plasma in a processing region of a first chamber using an RF power supply coupled to a titanium silicon alloy target in the first chamber, the titanium silicon alloy target having a first surface that is in contact with the processing region of the first chamber and a second surface that is opposite the first surface; rotating a first magnetron about the center point of the titanium silicon alloy target; biasing a substrate support positioned in the first chamber with an RF power supply coupled to the substrate support; flowing a nitrogen-containing gas into the processing region of the first chamber; depositing a titanium silicon nitride film layer on the titanium nitride film layer while the substrate is positioned on the substrate support in the first chamber; and forming the tungsten film layer on the titanium silicon nitride film layer, wherein forming the tungsten film layer comprises:
forming a plasma in a processing region of a second chamber using an RF power supply coupled to a tungsten target in the second chamber, the tungsten target having a first surface that is in contact with the processing region of the second chamber and a second surface that is opposite the first surface;rotating a second magnetron about the center point of the tungsten target;biasing a substrate support positioned in the second chamber with an RF power supply coupled to the substrate support positioned in the second chamber; anddepositing the tungsten film layer on the titanium silicon nitride film layer positioned on the substrate support in the second chamber, wherein a frequency of the RF power supply coupled to the tungsten target is greater than a frequency of the RF power supply coupled to the substrate support positioned in the second chamber.