Quantum efficiency of multiple quantum wells

摘要

Improved quantum efficiency of multiple quantum wells. In accordance with an embodiment of the present invention, an article of manufacture includes a p side for supplying holes and an n side for supplying electrons. The article of manufacture also includes a plurality of quantum well periods between the p side and the n side, each of the quantum well periods includes a quantum well layer and a barrier layer, with each of the barrier layers having a barrier height. The plurality of quantum well periods include different barrier heights.

主权项

1. A method comprising:
forming a stack of layers for a multiple quantum well semiconductor device on a substrate, said stack of layers comprising: a p type layer; an electron blocking layer in contact with said p type layer; a plurality of quantum well periods in contact with said electron blocking layer, each of said quantum well periods comprising a quantum well layer and a barrier layer that comprises a barrier layer p type doping concentration, and wherein said plurality of quantum well periods comprise barrier layers of varying p type doping concentration; an n-type layer in contact with said plurality of quantum well periods; and etching said stack of layers such that said plurality of quantum well periods comprise said quantum well layers of varying area.