Charged particle beam writing apparatus, charged particle beam writing method, and shot correction method of charged particle beam writing method

摘要

In a charged particle beam writing apparatus, a charged particle optical system includes a first, second, and third deflection control system configured to form a shot of a charged particle beam, control a shape and size of the shot, and control an irradiation position of the shot respectively. A shot data generation processing device generates shot data of writing a latent image on a resist layer in a sample, using (1) design data of a pattern to be formed in a member, wherein the member is formed in a sample, and the resist layer is formed on the member, and (2) correction information of a shot size and an irradiation shot position obtained from in-plane distribution data of an XY dimension variation amount of dimension measurement patterns. The dimension measurement patterns are formed by writing test patterns on a resist layer and transferring the test patterns onto a member.

主权项

1. A charged particle beam writing apparatus comprising:
a charged particle optical system including a first deflection control system configured to form a shot of a charged particle beam by a blanking deflector and a first shaping aperture, a second deflection control system configured to control a shape and a size of the shot by a shaping deflector and a second shaping aperture, and a third deflection control system configured to control an irradiation position of the shot, of which the shape and the size are controlled, by at least one objective deflector; a shot data generation processing device configured to generate shot data in a case of writing a latent image on a resist layer in a sample, by using (1) design data of a pattern to be formed in a member, wherein the member to be patterned is formed in a sample, and the resist layer is formed on the member to be patterned, and (2) correction information of a shot size and an irradiation shot position which are obtained from an in-plane distribution data of an XY dimension variation amount of a plurality of dimension measurement patterns, wherein the plurality of dimension measurement patterns are formed by writing using the charged particle beam, a plurality of test patterns on a resist layer of a test sample having a layer configuration corresponding to the sample and, thereafter, transferring the plurality of test patterns onto a member to be patterned that is provided in the test sample; and a deflection control device configured to respectively control formation of the shot, the shape and the size of the shot, and the irradiation position of the shot, by adjusting respective driving voltages of the blanking deflector, the shaping deflector, and the at least one objective deflector according to the shot data, wherein the shot data generation processing device, when generating shot data in a case of writing a latent image on a resist layer in a sample, extracts an edge shot of the dimension measurement patterns and corrects both the shot size and the shot irradiation position corresponding to the edge shot by using the correction information of a shot size and an irradiation shot position.