Methods for fabricating resistive memory device switching material using ion implantation

摘要

A memory device comprising a doped conductive polycrystalline layer having an electrically resistive portion, is described herein. By way of example, ion implantation to a subset of the conductive polycrystalline layer can degrade and modify the polycrystalline layer, forming the electrically resistive portion. The electrically resistive portion can include resistive switching properties facilitating digital information storage. Parametric control of the ion implantation can facilitate control over corresponding resistive switching properties of the resistive portion. For example, a projected range or depth of the ion implantation can be controlled, allowing for preferential placement of atoms in the resistive portion, and fine-tuning of a forming voltage of the memory device. As another example, dose and number of atoms implanted, type of atoms or ions that are implanted, the conductive polycrystalline material used, and so forth, can facilitate control over switching characteristics of the memory device.

主权项

1. A two-terminal memory device, comprising:
a first metal electrode above a first oxide layer over a semiconductor substrate; a pillar structure comprising:
a contact material layer on a top surface of the first metal electrode, wherein the contact material layer is semiconductive; anda switching layer on top of the contact material layer, wherein the switching layer comprises a portion of the contact material layer that is ionized, and wherein the switching layer has a lower conductivity than a portion of the contact material layer that is not ionized; and a second metal electrode above and in contact with a top surface of the pillar, wherein the second metal electrode comprises:
an active metal layer in contact with the top surface of the switching layer of the pillar; anda conductor layer in contact with the active material.