发明名称 Word line connection for memory device and method of making thereof
摘要 A three-dimensional monolithic memory device includes at least one device region and a plurality of contact regions each including a stack of an alternating plurality of conductive word line contact layers and insulating layers located over a substrate, where the stacks in the plurality of contact regions are separated from one another by an insulating material, and a bridge connector including a conductive material extending between a first conductive word line contact layer of a first stack in a first contact region and a second conductive word line contact layer of a second stack in a second contact region, where the first word line contact layer extends in a first contact level substantially parallel to a major surface of the substrate and the second word line contact layer extends in a second contact level substantially parallel to the major surface of the substrate that is different than the first level.
申请公布号 US9583539(B2) 申请公布日期 2017.02.28
申请号 US201414463113 申请日期 2014.08.19
申请人 SANDISK TECHNOLOGIES LLC 发明人 Takaki Seje
分类号 H01L27/24;H01L21/768;H01L21/3213;H01L27/115;H01L27/06;H01L45/00 主分类号 H01L27/24
代理机构 The Marbury Law Group PLLC 代理人 The Marbury Law Group PLLC
主权项 1. A three-dimensional monolithic memory device, comprising: at least one device region and a plurality of contact regions each comprising a stack of an alternating plurality of electrically conductive word line contact layers and electrically insulating layers located over a substrate, wherein the stacks in the plurality of contact regions are separated from one another by an insulating material; and a bridge connector comprising an electrically conductive material extending between a first electrically conductive word line contact layer of a first stack in a first contact region and a second electrically conductive word line contact layer of a second stack in a second contact region, wherein the first electrically conductive word line contact layer extends in a first contact level substantially parallel to a major surface of the substrate and the second electrically conductive word line contact layer extends in a second contact level substantially parallel to the major surface of the substrate that is different than the first level.
地址 Plano TX US