发明名称 |
Word line connection for memory device and method of making thereof |
摘要 |
A three-dimensional monolithic memory device includes at least one device region and a plurality of contact regions each including a stack of an alternating plurality of conductive word line contact layers and insulating layers located over a substrate, where the stacks in the plurality of contact regions are separated from one another by an insulating material, and a bridge connector including a conductive material extending between a first conductive word line contact layer of a first stack in a first contact region and a second conductive word line contact layer of a second stack in a second contact region, where the first word line contact layer extends in a first contact level substantially parallel to a major surface of the substrate and the second word line contact layer extends in a second contact level substantially parallel to the major surface of the substrate that is different than the first level. |
申请公布号 |
US9583539(B2) |
申请公布日期 |
2017.02.28 |
申请号 |
US201414463113 |
申请日期 |
2014.08.19 |
申请人 |
SANDISK TECHNOLOGIES LLC |
发明人 |
Takaki Seje |
分类号 |
H01L27/24;H01L21/768;H01L21/3213;H01L27/115;H01L27/06;H01L45/00 |
主分类号 |
H01L27/24 |
代理机构 |
The Marbury Law Group PLLC |
代理人 |
The Marbury Law Group PLLC |
主权项 |
1. A three-dimensional monolithic memory device, comprising:
at least one device region and a plurality of contact regions each comprising a stack of an alternating plurality of electrically conductive word line contact layers and electrically insulating layers located over a substrate, wherein the stacks in the plurality of contact regions are separated from one another by an insulating material; and a bridge connector comprising an electrically conductive material extending between a first electrically conductive word line contact layer of a first stack in a first contact region and a second electrically conductive word line contact layer of a second stack in a second contact region, wherein the first electrically conductive word line contact layer extends in a first contact level substantially parallel to a major surface of the substrate and the second electrically conductive word line contact layer extends in a second contact level substantially parallel to the major surface of the substrate that is different than the first level. |
地址 |
Plano TX US |