发明名称 |
Semiconductor packaging structure and method |
摘要 |
A system and method for packaging semiconductor dies is provided. An embodiment comprises a first package with a first contact and a second contact. A post-contact material is formed on the first contact in order to adjust the height of a joint between the contact pad a conductive bump. In another embodiment a conductive pillar is utilized to control the height of the joint between the contact pad and external connections. |
申请公布号 |
US9583464(B2) |
申请公布日期 |
2017.02.28 |
申请号 |
US201615230921 |
申请日期 |
2016.08.08 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Lin Chun-Cheng;Liu Chung-Shi;Huang Kuei-Wei;Chen Cheng-Ting;Lin Wei-Hung;Cheng Ming-Da |
分类号 |
H01L21/00;H01L25/065;H01L23/00;H01L25/00;H01L21/56;H01L21/48;H01L23/498 |
主分类号 |
H01L21/00 |
代理机构 |
Slater Matsil, LLP |
代理人 |
Slater Matsil, LLP |
主权项 |
1. A method for forming a semiconductor device, the method comprising:
forming a first contact and a second contact on a first package; forming a first underbump metallization in physical contact with the first contact; forming a second underbump metallization in physical contact with the second contact; adjusting a height of the first contact relative to the second contact by forming a first post-contact material over the first contact, wherein the first contact, the first underbump metallization and the first post-contact material each have a different composition from each other; forming a first external conductive connector in physical contact with the first post-contact material, wherein the first external conductive connector comprises a single material throughout the first external conductive connector, the single material having a different composition than the first post-contact material; and bonding a second package to the second contact, wherein the first external conductive connector extends away from the first package a first distance, the second package extends away from the first package a second distance, the second distance being parallel to and less than the first distance, and wherein the second package comprises a second conductive connector in physical contact with the second underbump metallization. |
地址 |
Hsin-Chu TW |