Low temperature silicon nitride films using remote plasma CVD technology

摘要

Embodiments of the present invention generally provide methods for forming a silicon nitride layer on a substrate. In one embodiment, a method of forming a silicon nitride layer using remote plasma chemical vapor deposition (CVD) at a temperature that is less than 300 degrees Celsius is disclosed. The precursors for the remote plasma CVD process include tris(dimethylamino)silane (TRIS), dichlorosilane (DCS), trisilylamine (TSA), bis-t-butylaminosilane (BTBAS), hexachlorodisilane (HCDS) or hexamethylcyclotrisilazane (HMCTZ).

主权项

1. A method, comprising:
forming a silicon nitride layer on a substrate in a processing region of a processing chamber by a remote plasma chemical vapor deposition process at a deposition temperature less than 300 degrees Celsius, wherein the remote plasma chemical vapor deposition process utilizes a processing gas mixture, wherein the processing gas mixture includes tris(dimethylamino)silane, di-t-butylaminosilane, or hexamethylcyclotrisilazane, and wherein the processing gas mixture is excited to form a plasma in a plasma cavity that is remote from the processing region, the plasma cavity is defined by a first electrode and a second electrode, and the first electrode and the second electrode are electrically isolated by an isolator ring.