Wafer level packaging for proximity sensor

摘要

A proximity sensor includes a semiconductor die, a light emitting assembly, a redistribution layer, and an encapsulating layer. A surface of the semiconductor die includes a sensor area and contact pads. A lens is positioned over the sensor area of the semiconductor die. The light emitting assembly includes a light emitting device having a light emitting area, a lens positioned over the light emitting area, and contact pads that face the redistribution layer. A side of the redistribution layer includes contact pads. Electrical connectors place each of the contact pads of the semiconductor die in electrical communication with a respective one of the contact pads of the redistribution layer. The encapsulating layer is positioned on the redistribution layer and at least partially encapsulates the semiconductor die, the lens over the sensor area of the semiconductor die, and the light emitting assembly.

主权项

1. A method, comprising:
placing a semiconductor die on a first adhesion layer, the semiconductor die including a sensor area on a first side of the semiconductor die, the first side of the semiconductor die facing away from the first adhesion layer; placing a first lens over the sensor area of the semiconductor die; placing a light emitting assembly over the first adhesion layer, the light emitting assembly including a light emitting device having a light emitting area and a second lens positioned over the light emitting area, the light emitting area facing away from the first adhesion layer; forming an encapsulating layer at least partially on the semiconductor die, the first lens, and the light emitting assembly to form a proximity sensor assembly having a first side, the first side facing away from the first adhesion layer; separating the proximity sensor assembly from the first adhesion layer; placing the proximity sensor assembly on a second adhesion layer, the first side of proximity sensor assembly facing the second adhesion layer; and forming a redistribution layer on a second side of the proximity sensor assembly.