发明名称 |
Systems and methods for enhanced light trapping in solar cells |
摘要 |
Methods for improving the light trapping characteristics of crystalline silicon solar cells are provided. In one embodiment, the backside surface of a crystalline silicon solar cell substrate is textured with a pulsed laser beam. The textured backside surface of the crystalline silicon solar cell substrate is then annealed to remove damage from the laser texturization process. |
申请公布号 |
US9583651(B2) |
申请公布日期 |
2017.02.28 |
申请号 |
US201213727393 |
申请日期 |
2012.12.26 |
申请人 |
Solexel, Inc. |
发明人 |
Moslehi Mehrdad M.;Rana Virendra V.;Coutant Solene;Deshazer Heather;Anbalagan Pranav;Rattle Benjamin |
分类号 |
H01L21/00;H01L31/02;H01L31/0236;H01L31/068;H01L31/18 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
Wood John |
主权项 |
1. A method for making a crystalline silicon solar cell substrate, said method comprising the steps of: providing a crystalline silicon substrate for use in an all back-contact back-junction solar cell; applying a first pulsed laser beam to the backside surface of said silicon substrate; texturing the backside surface of said silicon substrate using said first pulsed laser beam, said first pulsed laser beam having a picosecond pulse width and an infrared wavelength; applying a second pulsed laser beam to said textured backside surface; and annealing said backside surface of said silicon substrate using said second pulsed laser beam, said annealing process removing laser damage; further comprising the steps of: applying said first pulsed laser beam to the frontside surface of said silicon substrate; texturing said frontside surface of said silicon substrate with said first pulsed laser beam; depositing a dopant on the frontside surface of said thin silicon substrate; and doping said frontside of said silicon substrate with third pulsed laser beam, said laser doping process forming a front surface field. |
地址 |
Milpitas CA US |