发明名称 |
Substrate, chip arrangement, and method for manufacturing the same |
摘要 |
In various embodiments, a substrate is provided. The substrate may include: a ceramic carrier having a first side and a second side opposite the first side; a first metal layer disposed over the first side of the ceramic carrier; a second metal layer disposed over the second side of the ceramic carrier; and a cooling structure formed into or over the second metal layer. |
申请公布号 |
US9585241(B2) |
申请公布日期 |
2017.02.28 |
申请号 |
US201314034669 |
申请日期 |
2013.09.24 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
Hable Wolfram;Grassmann Andreas;Winter Frank;Geitner Ottmar;Schwarz Alexander;Herbrandt Alexander |
分类号 |
H05K7/20;H05K1/02;H05K3/32;H01L23/31;H01L23/373;H01L21/48;H05K1/03;H01L23/467;H01L23/473;H01L23/498 |
主分类号 |
H05K7/20 |
代理机构 |
Viering, Jentschura & Partner mbB |
代理人 |
Viering, Jentschura & Partner mbB |
主权项 |
1. A chip arrangement comprising:
a first substrate, comprising:
a ceramic carrier comprising a first side and a second side opposite the first side;a first metal layer disposed over the first side of the ceramic carrier;a second metal layer disposed over the second side of the ceramic carrier;a cooling structure formed into or over the second metal layer; wherein the cooling structure is formed from the same metal as the second metal layer;wherein the cooling structure is configured to form a structure selected from a group consisting of a pin structure, a fin structure, and combinations thereof; a chip disposed on the first metal layer of the first side of the first substrate, wherein the chip is electrically coupled to the first metal layer of the first substrate; and a second substrate, comprising:
a ceramic carrier comprising a first side and a second side opposite the first side;a first metal layer disposed over the first side of the ceramic carrier;a second metal layer disposed over the second side of the ceramic carrier; anda cooling structure formed into or over the second metal layer; wherein the cooling structure is formed from the same metal as the second metal layer; wherein the chip is sandwiched between the first substrate and the second substrate and furthermore directly coupled to the second substrate, wherein the chip is furthermore electrically coupled to the first metal layer of the second substrate. |
地址 |
Neubiberg DE |