发明名称 MOS transistor structure and method of forming the structure with vertically and horizontally-elongated metal contacts
摘要 Elongated metal contacts with longitudinal axes that lie in a first direction are formed to make electrical connections to elongated source and drain regions with longitudinal axes that lie in the first direction, and elongated metal contacts with longitudinal axes that lie a second direction are formed to make electrical connections to elongated source and drain regions with longitudinal axes that lie the second direction, where the second direction lies orthogonal to the first direction.
申请公布号 US9583609(B2) 申请公布日期 2017.02.28
申请号 US201313850192 申请日期 2013.03.25
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 McMullan Russell Carlton;Benaissa Kamel
分类号 H01L29/66;H01L29/78;H01L21/311;H01L21/8234;H01L21/8238;H01L27/02;H01L21/768 主分类号 H01L29/66
代理机构 代理人 Garner Jacqueline J.;Brill Charles A.;Cimino Frank D.
主权项 1. A method of forming a semiconductor structure comprising: forming a hard mask that touches and lies over a dielectric layer, the dielectric layer having a top surface; etching the hard mask to form a first elongated opening and a second elongated opening, the first elongated opening having a depth, a length extending in a first direction and a width extending in a second direction, the length being larger than the width and the second elongated opening having a depth, a length extending in the second direction and a width extending in the first direction, the length being larger than the width, the first elongated opening having a bottom surface that lies above and spaced apart from the top surface of the dielectric layer, the second elongated opening having a bottom surface that lies above and spaced apart from the top surface of the dielectric layer, the second direction being substantially orthogonal to the first direction; and etching the hard mask to form a third elongated opening and a fourth elongated opening after the first elongated opening and the second elongated opening have been formed, the third elongated opening exposing a first region on the top surface of the dielectric layer, and having a length larger than a width wherein the length extends in the first direction, the fourth elongated opening exposing a second region on the top surface of the dielectric layer, and having a length larger than a width wherein the length extends in the second direction.
地址 Dallas TX US