发明名称 COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY AND PATTERN FORMING METHOD
摘要 This underlayer film-forming composition for lithography contains a compound represented by specific formula (1) and 20 to 99 mass% of a solvent component (S), wherein the compound represented by formula (1) comprises 27 to 100 mass% of a component (A), which exists in addition to the solvent component (S).
申请公布号 SG11201700801R(A) 申请公布日期 2017.02.27
申请号 SG11201700801R 申请日期 2015.07.31
申请人 MITSUBISHI GAS CHEMICAL COMPANY, INC. 发明人 OKADA, KANA;MAKINOSHIMA, TAKASHI;ECHIGO, MASATOSHI;HIGASHIHARA, GO;OKOSHI, ATSUSHI
分类号 G03F7/11;C07C261/02;G03F7/004;G03F7/26;H01L21/027 主分类号 G03F7/11
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